![]() Large area growth methods for TMDCs that are scalable and can be used in traditional top-down fabrication processes or transferred on application appropriate substrates are therefore under intense research. Whilst the “exfoliation and transfer” method offers high quality single crystal layers with excellent electronic and optoelectronic properties, the micron scale material size limits the applicability of the method to very few non-manufacturable applications. Weak van der Waals forces between each atomic layer led to “exfoliation and transfer” being one of the first methods used to obtain monolayer TMDCs 7, 10, 12. Altogether this indicates such material’s high potential for replacing and exceeding current material technologies. Atomically thin TMDCs such as MoS 2 offer unique optical, electronic and physical properties such as quantum size effects 3, 4, mobilities exceeding theoretical values of 410 cm 2 V −1 s −1 5, 6, on/off ratios of up to 10 10 7, 8, 9, subthreshold slopes down to 74 mV/dec 4, 10, beyond the thermal transport limit switching performance 9, 11 and mechanical flexibility. Transition Metal Dichalcogenides (TMDCs) are non-carbon layered materials and in single layer form they are direct bandgap semiconductors, overcoming graphene’s lack of energy bandgap, vital for optoelectronic applications 1, 2. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications. In addition, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at ±5 V with on/off ratio of 10 7 and a memory window of 3.25 V are demonstrated. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm 2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 10 7. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. ![]() They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |